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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.125 Ampere APPLICATION * Ultra high speed switching CHN203KPT FEATURE .041 (1.05) .033 (0.85) SOT-23 .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) * Maximum total power disspation is 250mW. * Peak forward current is 500mA. (1) (3) CONSTRUCTION * Silicon epitaxial planar (2) MARKING * E4 .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (2) (1) .045 (1.15) .033 (0.85) .019 (0.50) * Small surface mounting type. (SOT-23) * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density. (3) Dimensions in inches and (millimeters) SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note 2) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TRR TJ TSTG CHN203KPT 85 56 80 0.125 4.0 1.5 4.0 +150 -65 to +150 UNITS Volts Volts Volts Amps Amps pF nSec o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 100mA Maximum Average Reverse Current at VR= 80V SYMBOL VF IR CHN203KPT 1.20 0.5 UNITS Volts uAmps 2002-4 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 10mA to reverse current of 10mA; RL=100 Ohms. 3. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CHN203KPT) FIG. 1 - TYPICAL FORWARD CURRENT DERAING CURVE 500 FORWARD CURRENT, (mA) 200 100 50 20 10 5 2 1 0 25 50 75 100 o FIG. 2 - FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT, (%) 125 100 75 50 25 0 Ta=85oC 50oC 25oC 0oC o - 30 C 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AMBIENT TEMPERATURE, ( C) FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 - REVERSE CHARACTERISTICS Ta=100oC JUNCTION CAPACITANCE, (pF) f=1MHz REVERSE CURRENT, (nA) 4 100 10 1 - 75oC 50oC 25oC 0oC 25oC 2 0.1 0.01 0 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE, (V) 0 20 30 40 50 60 70 80 REVERSE VOLTAGE, (V) FIG. 5 - REVERSE RECOVERY TIME 10 REVERSE RECOVERY TIME, (nS) 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 FORWARD CURRENT, (mA) FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 0.01F D.U.T. 50 PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE |
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